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| 2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 30 50 200 50 200 150 -55 to +150 Unit V V A A A W C C 2 2SK1947 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 30 -- -- 2.0 -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.047 30 5810 2360 270 75 270 420 200 1.2 140 Max -- -- 10 250 3.0 0.06 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 25 A VGS = 10 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1947 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1000 300 Drain Current I D (A) 100 30 10 200 DC Maximum Safe Operation Area 100 3 by R DS (on) 1 0.3 0.1 1m Op = s era 10 ms tio n( (1 T s Operation in this c = 25 hot) area is limited C ) PW 10 10 0 s s Ta = 25C 1 3 10 30 100 300 1000 0 50 100 150 Case Temperature Tc (C) Drain to Source Voltage V DS (V) Typical Output Characteristics 100 10 V Drain Current I D (A) 80 60 40 20 8V Drain Current I D ( A ) 6V 40 30 20 10 50 Typical Transfer Characteristics VDS = 10 V Pulse Test 5.5 V 5V 4V VGS = 3.5 V 4 8 12 16 20 Tc = 25C 75C -25C 0 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4 2SK1947 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS (on) (V) 5 Static Drain to Source on State Resistance R DS (on) ( ) Pulse Test 4 3 50 A 2 1 20 A I D = 10 A 0.5 Pulse Test 0.2 0.1 0.05 0.02 0.01 0.005 0 4 8 12 16 20 2 5 10 20 50 100 200 Gate to Source Voltage V GS (V) Drain Current I D (A) VGS = 10 V Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.20 Static Drain to Source on State Resistance R DS (on) ( ) Forward Transfer Admittance | yfs | (S) 0.16 0.12 I D = 50 A 0.08 10 A, 20 A 0.04 0 -40 Pulse Test VGS = 10 V 100 50 20 Forward Transfer Admittance vs. Drain Current Pulse Test V DS = 10 V Tc = 25C -25C 10 5 2 1 0.5 75C 0 40 80 120 160 1 2 5 10 20 50 Case Temperature Tc (C) Drain Current I D (A) 5 2SK1947 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 100 50 20 10 5 1 2 5 10 20 50 100 Reverse Drain Current I DR (A) 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) di/dt = 100 A/s V GS = 0, Ta = 25C 10000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 1000 Coss 100 VGS = 0 f = 1 MHz Crss Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 400 300 VDS 200 100 VDD = 200 V 100 V 50 V 80 160 240 320 8 4 0 400 VDD = 200 V 100 V 50 V VGS 16 12 20 Gate to Source Voltage VGS (V) 1000 500 Switching Time t (ns) 200 100 50 20 10 0.5 Switching Characteristics td(off) tf tr ID = 50 A t d(on) VGS = 10 V, VDD = 30 V : PW = 2 s, duty < 1% = 1 2 5 10 20 50 0 Gate Charge Qg (nc) Drain Current I D (A) 6 2SK1947 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 10 VGS = 10 V 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance S (t) 3 D=1 0.5 0.3 0.2 0.1 1 TC = 25C 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM ulse ot P 0.03 1 Sh T 1m 10 m Pulse Width PW (s) 100 m PW D = PW T 0.01 10 100 1 10 7 2SK1947 Switching Time Test Circuit Vin Monitor 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vout VDD . = 30 V . 90% td (on) tr 90% td (off) tf Vin 10% 10% 10% Waveforms 8 Unit: mm 6.0 0.2 5.0 0.2 3.3 0.2 20.0 0.3 26.0 0.3 20.0 0.6 2.5 0.3 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2 5.45 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL -- -- 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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